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  Datasheet File OCR Text:
 SHINDENGEN
Schottky Rectifiers (SBD)
Dual
S30SC4M
40V 30A
FEATURES Tj150 PRRSM avalanche guaranteed Small jc High current capacity APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment Telecommunication
OUTLINE DIMENSIONS
Case : MTO-3P Unit : mm
RATINGS
Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Repetitive Peak Surge Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=126 IFSM Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125 PRRSM Pulse width 10Es, Rating of per diode, Tj=25 Repetitive Peak Surge Reverse Power Mounting Torque TOR (Recommended torqueF0.5Nm) Electrical Characteristics (If not specified Item Symbol VF Forward Voltage IR Reverse Current Junction Capacitance Cj Thermal Resistance AEjc Tc=25) Conditions Ratings -40150 150 40 45 30 300 1000 0.8 Ratings Max.0.55 Max.10 Typ.590 Max.1.0 Unit V V A A W Nm Unit V mA pF /W
IF=15A, Pulse measurement, Rating of per diode VR=VRM, Pulse measurement, Rating of per diode f=1MHz, VR=10V, Rating of per diode junction to case
Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd
S30SC4M
Forward Voltage
Forward Current IF [A]
10
Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP]
1
Pulse measurement per diode
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
S30SC4M
Junction Capacitance
f=1MHz Tc=25C TYP per diode
Junction Capacitance Cj [pF]
1000
100
0.1
1
10
Reverse Voltage VR [V]
S30SC4M
10000
Reverse Current
1000 Tc=150C [MAX]
Reverse Current IR [mA]
Tc=150C [TYP] 100 Tc=125C [TYP]
10
Tc=100C [TYP]
Tc=75C [TYP] 1
Pulse measurement per diode
0.1
0
5
10
15
20
25
30
35
40
Reverse Voltage VR [V]
S30SC4M
50
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
DC D=0.05 40 0.1 0.2 30 0.3
0.5 20
10
SIN 0.8
0
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150C
0 VR tp D=tp /T T
S30SC4M
30
Forward Power Dissipation
DC
Forward Power Dissipation PF [W]
25 SIN 0.5
D=0.8
20 0.1 15 0.05
0.3 0.2
10
5
0
0
10
20
30
40
50
Average Rectified Forward Current IO [A]
Tj = 150C IO 0 tp D=tp /T T
S30SC4M
60
Derating Curve
Average Rectified Forward Current IO [A]
50 DC D=0.8 40 0.5 30 SIN 0.3 0.2 0.1 10 0.05
20
0
0
20
40
60
80
100
120
140
160
Case Temperature Tc [C]
VR = 20V 0 0
IO
VR tp D=tp /T T
S30SC4M
500
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
400
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=125C before surge current is applied
300
200
100
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [C]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM p) / PRRSM p=10s) Ratio (t (t
1
0.1
1
10
100
Pulse Width t p [s]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP


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